Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2534-2536
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin films of Li-doped ZnO of different compositions (Zn1−xLix)O, x=0.1, 0.17, and 0.3 have been prepared on Si(100) substrates, with no buffer layer, by the pulsed laser deposition method. Ferroelectric behavior with a memory window of 1.2 V has been observed in capacitance–voltage measurements. The peak maximum in the capacitance–temperature curve suggests that the ferroelectric phase transition occurs around 340 K. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123889
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