ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ballistic electron emission spectroscopy (BEES) has been used to determine the conduction-band offset between a 10-nm-thick Al0.12In0.22Ga0.66As (Q) strained layer and a ternary Al0.2Ga0.8As (T) barrier located beneath the surface. A three-sample process was used so that the known, reproducible Au/GaAs Schottky barrier would be the top layer of all measured structures. BEES thresholds obtained for Au/GaAs, Au/GaAs/Q, and Au/GaAs/Q/T were 0.96±0.02, 0.98±0.04, and 1.08±0.04 meV yielding offsets of ∼20 meV for GaAs/Q and ∼100 meV for Q/T. Under the affect of a high-temperature anneal, the Q/T offset was reduced to ∼40 meV. In addition, a structure employing solely Au/GaAs/AlGaAs was used to study transitivity for the Q/T material system. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122741
