Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 795-796
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We propose doped-thin-Si-film single-electron transistors (DS-SETs), which are fabricated from a highly doped Si film in a silicon-on-insulator substate by electron-beam lithography with a high-resolution resist (calixarene) and dry etching with CF4 gas. Because the structure can be well controlled, the DS-SET with a 45-nm-diam island shows nearly ideal characteristics of SETs with a charging energy of 1.4 meV. The results demonstrate that single-electron tunneling occurs through a single island without any isolated islands formed in potential fluctuations. We also discuss the discreteness of energy levels in a Si island. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120896
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
