Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 433-435
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the effects of the wet and dry oxidation processes on the interfacial roughness and time dependent dielectric breakdown (TDDB) characteristics of the poly-Si/SiO2/Si(100) trilayer. The interface roughness of the oxide layers buried under a thick poly-Si electrode has been investigated using an x-ray reflectivity technique. Analysis of x-ray reflectivity data for the trilayer samples and for a bare oxide film shows that interface roughness of poly-Si electrode/SiO2 interfaces depends on oxidation process while oxide layers have smooth SiO2/Si-subtstrate interfaces. TDDB of the SiO2 layer has also been observed to depend on the oxidation process, indicating that the interface roughness is a crucial factor affecting the TDDB characteristics. The wet oxidized SiO2 film is more stable to dielectric breakdown and has smoother interfaces than the dry oxidized sample. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120780
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