ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The α-particle energy loss method (AEL) has been implemented in situ to monitor film thickness during growth by molecular beam epitaxy. For InP and GaAs substrates recoil implanted with α-particle emitters, we have been able to measure thickness and composition of deposited GaAs, AlGaAs and InGaAs in real time. The AEL method yields in situ real time results comparable in accuracy to those obtained by ex situ scanning electron microscope and high-resolution x-ray diffraction measurements. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121626