Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 3193-3195
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate the formation of a two-dimensional electron gas in lattice-matched, modulation-doped ZnTe/CdSe quantum well structures. Despite the well-known difficulty in n doping the II–VI semiconductor ZnTe, we find that the unusual type-II band alignment between ZnTe and CdSe allows the efficient transfer of free carriers from n-ZnTe into a CdSe quantum well since the deep donor levels in the n-ZnTe barrier lie above the confined ground state in the CdSe well. The sizeable well depth (∼1.35 eV) enables the fabrication of two-dimensional electron gases with sheet concentrations up to ∼6×1012 cm−2, and with a low-temperature mobility up to 1.4×104 cm2/V s. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121590
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