Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 2144-2146
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
It has been recently shown that growth of [001]-oriented short period (AC)n/(BC)n vertical superlattices (n∼1−2) spontaneously creates a lateral composition modulation in the substrate plane ([110] direction), where wire-like AC-rich and BC-rich domains alternate with a period of ∼100−200 Å. This creates a new type of lattice structure with orthogonal [001] and [110] strain fields and compositional waves. Using a three-dimensional plane-wave pseudopotential approach, we study here the electronic properties of this type of structure in a GaInAs alloy, predicting valence band splittings into distinctly polarized components, a ≤100 meV band-gap reduction and strong, type I electron and hole confinement in the In-rich lateral channels. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121303
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