ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Band-gap lowering due only to the cation ordering effect is investigated in InAlAs layers grown on InP by using photoluminescence measurement. Double-crystal x-ray diffraction and Rutherford backscattering measurements confirm that both of the InAlAs epilayers studied, grown at 700 and 750 °C, are lattice matched with InP substrates. Through transmission electron diffraction measurements, it is observed that a CuPt-type ordering structure is formed in the InAlAs layers grown at 700 °C but not in the layers at 750 °C. Photoluminescence measurements at 1.7 K reveal that the band-gap energy of the ordered InAlAs is smaller by 60 meV than that of the unordered InAlAs. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121222