Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 1463-1465
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The low-temperature grown AlGaAs/GaAs multiple quantum well structures were characterized by photoluminescence (PL) spectroscopy. The samples were grown at 270–400 °C and annealed at 500–900 °C. After anneal, photoluminescence quenching was observed for the samples grown at temperatures below 350 °C, and found to show a strong dependence on the growth and anneal temperatures. The luminescence intensity for the PL-quenched sample exhibits a power law dependence on the excitation level with an exponent close to 2, indicating a bimolecular recombination process in parallel with strong nonradiative recombination. The photoluminescence quenching upon anneal is attributed to the formation of arsenic clusters that serve as new nonradiative recombination channels. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120593
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