Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 93-95
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In metalorganic chemical vapor deposition grown GaAs:Er,O samples, at ambient pressure, only the ErGa−2O center is excited by above band gap host photoexcitation (host excitation) and shows a sharp infrared luminescence spectra due to intra-4f transitions in the Er3+ ion. It is found, at high pressure, that at least two other Er centers become optically active by host excitation. One of these pressure-induced centers is assigned to a specific Er center having slightly different atomic configuration than the ErGa−2O center by comparing the pressure-induced photoluminescence (PL) spectra with the site-selective PL spectra. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119479
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