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  • 1
    Electronic Resource
    Electronic Resource
    GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 802-804 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaInAsSb/AlGaAsSb multiple-quantum-well diode laser structure consisting of Al0.6Ga0.4As0.05Sb0.95 cladding layers, Al0.3Ga0.7As0.02Sb0.98 confining layers, and four 15-nm-thick Ga0.87In0.13As0.12Sb0.88 quantum wells with 20-nm-thick Al0.3Ga0.7As0.02Sb0.98 barrier layers was grown by organometallic vapor phase epitaxy. These lasers, emitting at 2.1 μm, have exhibited pulsed threshold current densities as low as 1.2 kA/cm2. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118227
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