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Digitale Medien

Alternating Be and C doping for strain compensated GaAs/AlAs distributed Bragg reflectors (1997)

Mazuelas, A. ; Hey, R. ; Jenichen, B. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 2088-2090

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We demonstrate a new type of strain compensated, p-type distributed Bragg reflector (DBR) using alternating doping of Be in GaAs and C in AlAs with carbon concentrations as high as 2×1020 cm−3. These DBRs exhibit simultaneously a high crystalline quality, an excellent surface morphology, and no misfit dislocations, which cannot be achieved in undoped or Be-doped DBRs. The absolute optical reflectivity is as high as in the undoped DBR. The differential resistance of these structures is comparable to best reported values in Be-doped DBRs. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.118952

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