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A niobiumnitride mixer with niobium tuning circuit (1996)

Plathner, B. ; Schicke, M. ; Lehnert, T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 4102-4104

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: This letter reports a low noise submillimeter-wave mixer using NbN tunnel junctions integrated in Nb matching circuits. The double side band receiver noise temperature was 245 K at 345 GHz. Plasma conditions for NbN film deposition on quartz substrates at room temperature are created by using a second Nb target as a selective nitrogen pump. Electrodes for tunnel junctions with critical temperatures above 15 K and normal state resistivities in the range from 130 to 160 μΩ cm were obtained. This permits integrating NbN junctions into normal metal or non-NbN superconducting matching circuits, which is of great interest for THz mixers. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117832

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