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Digitale Medien

Piezoelectric properties of Ca-modified PbTiO3 thin films (1996)

Kholkin, A. L. ; Calzada, M. L. ; Ramos, P. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 3602-3604

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Low-field piezoelectric coefficient and strain were investigated in Ca-modified PbTiO3 thin films by means of optical interferometry. A remanent piezoelectric coefficient of 70 pm/V was observed that agrees well with the values previously reported for the bulk ceramics of the same composition. The efficient poling of the films can be achieved at room temperature under the field of 300 kV/cm. Electrically induced strains as high as 0.8% were observed using a bipolar driving field of 1 MV/cm. Strain response under a unipolar driving field exhibited a good linearity and small hysteresis. These properties combined with the low dielectric constant and high dielectric strength are shown to be attractive for micromechanical applications. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.117220

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