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Vacancy-type defects in molecular beam epitaxy low temperature grown GaAs, a positron beam lifetime study (1996)

Störmer, J. ; Triftshäuser, W. ; Hozhabri, N. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 1867-1869

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Positron beam lifetime spectroscopy has been utilized to study the depth distribution of vacancy-type defects in molecular beam epitaxy GaAs grown at low temperature. Lifetime spectra were measured as a function of positron energy. From the analysis of the positron lifetime in as-grown and annealed low temperature grown GaAs, the concentrations of Ga monovacancies and voids are estimated. Our results show that in an as-grown sample the Ga monovacancy concentration is 〉3×1018 cm−3. It is also known that vacancy-cluster concentration in an annealed sample exceeds 1018 cm−3 with a nonuniform spatial distribution. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117460

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