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Ultrafast optical pump THz-probe spectroscopy on silicon (1996)

Zielbauer, Jürgen ; Wegener, Martin

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 1223-1225

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We investigate the dynamics of photoexcited carriers in silicon after interband excitation with optical femtosecond pulses by probing intraband transitions with time-delayed THz pulses. The experimental data at various temperatures are compared with numerical, self-consistent solutions of the intraband polarization and Maxwell's equations. In addition, we deduce the carrier scattering rate from the comparison between experiment and theory. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115933

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