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Growth and x-ray characterization of strain compensated GaAs/AlAs distributed Bragg reflectors (1996)

Mazuelas, A. ; Nörenberg, H. ; Hey, R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 806-808

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have grown strain compensated GaAs/AlAs distributed Bragg reflectors by solid source molecular beam epitaxy using carbon doping densities up to about 2×1020 cm−3. The residual strain with respect to the GaAs substrate can be as low as 1×10−4. This results in a large increase of their critical thickness with regard to the undoped case. We demonstrate that simulations of the x-ray diffraction patterns are essential in order to determine the chemical profile as well as the structural parameters of the GaAs:C and AlAs:C layers with high accuracy. The effective incorporation of carbon on lattice sites is in AlAs:C twice as large as in GaAs:C using the same incident carbon flux. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116539

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