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AlGaAs/GaAs light-emitting diode on a Si substrate with a self-formed GaAs islands active region grown by droplet epitaxy (1996)

Hasegawa, Y. ; Egawa, T. ; Jimbo, T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 523-525

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report the preliminary results on self-formed GaAs islands grown on the GaAs/Si substrate by metalorganic chemical vapor deposition using droplet epitaxy. Atomic force microscope observation shows that the GaAs islands exhibit a conical shape with heights of 90–170 nm, diameters of 600–750 nm, and densities of 107 cm−2, which are controlled by the trimethylgallium flow rate. In addition, an AlGaAs/GaAs light-emitting diode (LED) on Si with a self-formed GaAs island active region was fabricated by the use of this technique. The LED was operated up to 27 μW at 190 mA under direct current conditions at room temperature. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116387

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