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Space-charge-limited currents in nonstoichiometric GaAs (1996)

Ibbetson, J. P. ; Mishra, U. K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 3781-3783

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A study of space-charge-limited transport in nonstoichiometric (NS) GaAs is presented. The NS-GaAs was grown at 250 °C by molecular beam epitaxy and subsequently annealed at 700 °C so that the room-temperature low-field conductivity is due almost entirely to electrons thermally excited to the conduction band from deep traps. Experimental current–voltage characteristics of an n+ GaAs/NS-GaAs homojunction structure display an unusual current saturation whose onset occurs at an electric field of ∼5 kV/cm. We argue that this behavior is due to a combination of electron velocity saturation and the high concentration of compensated traps in annealed NS-GaAs. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116615

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