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Digitale Medien

Completely passivated high conductivity copper films made by annealing Cu/Al bilayers (1996)

Wang, Wei ; Lanford, W. A. ; Murarka, S. P.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 1622-1624

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Thin films made by annealing Cu(500 nm)/Al(7 nm)/SiO2/Si are investigated using Rutherford backscattering and resistivity measurements. Annealing these films in a low pressure of oxygen results in the formation of a thin surface layer of hole-free aluminum oxide which protects the underlying copper from oxidation. Even when heated in air at 350 °C for 4 h, no growth of copper oxide is detected. These films have a resistivity as low as 2.4 μΩ cm, comparable to the resistivity of pure copper films (2.1 μΩ cm) made in the same deposition system. The use of such films for microelectronic metallization is briefly discussed. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.115671

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