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Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates (1995)

Egawa, T. ; Hasegawa, Y. ; Jimbo, T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 2995-2997

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have studied the rapid degradation of the AlGaAs/GaAs single quantum well laser diodes on Si substrates grown by metalorganic chemical vapor deposition. The dislocations propagate at velocities up to ∼75 μm/h along 〈100〉 and ∼20 μm/h along 〈110〉, which cause an increase in threshold current and a decrease in differential quantum efficiency. The degraded current–voltage characteristic resulted from the defect-assisted impurity diffusion. The degradation process occurs very rapidly due to the presence of a high density of defects and thermally induced strain. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114930

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