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Relaxation mechanism of Ge islands/Si(001) at low temperature (1995)

LeGoues, F. K. ; Tersoff, J. ; Reuter, M. C. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 2317-2319

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Strained layers generally relax by dislocation glide. Here, using UHV-TEM, we study growth of Ge islands on Si(001) at (approximately-less-than)350 °C. We find that, although conventional relaxation (i.e., via glide of 60° dislocations) is suppressed, the islands grow relaxed from the outset, by direct incorporation of sessile 90° dislocations into the edge of the growing island. Paradoxically, the low-temperature islands are more fully relaxed than those grown at higher temperature. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.115138

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