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Digitale Medien

Resonant cavity light emitting diode with an AlxOy/GaAs reflector (1995)

Huffaker, D. L. ; Lin, C. C. ; Shin, J. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 3096-3098

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A resonant cavity light emitting diode is fabricated which makes use of a Ag mirror/contact and a buried AlxOy/GaAs Bragg reflector. The buried AlxOy is formed by the selective conversion of AlAs. The differential light output efficiency is measured and found to be ∼5.5% when the AlxOy/GaAs reflector is present versus ∼2.5% for a control device without the AlxOy/GaAs mirror. The measured efficiencies are compared with calculations. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.113614

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