Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 2694-2696
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the effects of misoriented GaAs substrates and varied substrate temperatures on the formation of GaxIn1−xP lateral quantum wells (LQWs) by the strain-induced lateral-layer ordering (SILO) process. Nominally [001] GaAs on-axis substrates, [001] substrates cut 2° off toward the [110] direction, and [001] substrates cut 2° off toward the [1¯10] direction were used to simultaneously grow LQWs. The samples were characterized using plan-view and cross-sectional transmission electron microscopy and polarized photoluminescence spectroscopy. We found that regardless of the substrate misorientation or substrate growth temperature, the SILO process induced LQWs always formed along the [1¯10] direction; primarily determined by the direction of the group-V dimer bonds on the surface during growth. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113491
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