Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 1617-1619
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have designed and developed a new double-etch technique for fabricating three-dimensional millimeter-wave photonic band-gap crystals. This technique doubles the band-gap frequency obtainable from silicon wafers. By introducing overetching, the double-etch geometry allows one-way tuning of the midgap frequency. We have experimentally demonstrated this property by fabricating and testing structures with different overetch ratios. Terahertz spectroscopy techniques were used to measure photonic band-gap crystals with midgap frequencies ranging from 340 to 375 GHz.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112929
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