ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Photoconductive properties of the Er-doped InP (1994)

Wang, X. Z. ; Neuhalfen, A. J. ; Wessels, B. W.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 466-468

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The photoconductive properties of Er-doped InP layers prepared by atmospheric pressure metalorganic vapor phase epitaxy were investigated. Two Er3+-related photoconductive transitions were observed at 0.807 and 1.27 eV. The 0.807 eV transition involves a 4f-shell intracenter transition. The 1.27 eV transition is attributed to a free to bound transition involving the Er3+-related trapping center. Presumably this trapping level is important in the energy transfer process determining the Er3+-related emission efficiency in InP. A model is developed to explain the photoconductive response of the Er-doped materials.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111131

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit