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Relaxation of phosphor field in SrS:Ce thin film electroluminescent devices (1994)

Ohmi, Koutoku ; Inoue, Satoshi ; Tanaka, Shosaku ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 3464-3466

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Capacitance-applied voltage and internal charge-phosphor field characteristics of SrS:Ce thin film electroluminescent devices have been studied. The average phosphor field of the SrS:Ce films reaches the maximum of 1.3 MV/cm and relaxes to 0.7 MV/cm, although the applied voltage increases. The turn-on voltage of the SrS:Ce thin film electroluminescent device decreases nonlinearly with increase of conduction charge and depends on the slew rate dV/dt. A large spike current is observed and is thought to correspond to the charge generation in the SrS:Ce layer, which results in the space charge, and causes a relaxation of phosphor field in the SrS:Ce films.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111242

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