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Digitale Medien

Low temperature molecular beam epitaxial growth of DyBaCuO superconducting thin films (1994)

Mamutin, V. V. ; Kartenko, N. F. ; Goloschapov, S. I. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 2031-2033

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Superconducting DyBa2Cu3O6.7 (orthorhombic I phase) thin films were grown in situ on NdGaO3 (001) and (100) substrates at 400–440 °C by molecular beam epitaxy method. The c-axis lattice constant and the critical temperature were c=11.72 A(ring) and Tc∼70 K, respectively, and they became c=11.70 A(ring) and Tc=88 K after annealing in O2 at 400 °C. Due to the slow deposition rates in the range of 0.01–0.10 A(ring)/s, only films with the c-axis perpendicular to the substrate surface were grown in situ in spite of the low temperature growth conditions. The full width at half-maximum of the (005) x-ray diffraction peak rocking curve was ∼0.35°, indicating together with the reflection high-energy electron diffraction that the in situ grown films were high quality epitaxial single crystals.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.111729

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