Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 961-963
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Paramagnetic centers in self-supporting porous Si films formed by anodization of Si(100) and (111) wafers have been studied by X-band electron paramagnetic resonance (EPR) at room temperature. The EPR spectra indicate that this center has C3v symmetry, and the angular dependence of the line position is described by a g tensor axially symmetric about a 〈111〉 axis; g(parallel)=2.0024, g⊥=2.0080 for the (100) film and g(parallel)=2.0020, g⊥=2.0088 for the (111) film. The small g shift along the 〈111〉 axis indicates that the center is assigned to be a dangling bond localized on a single silicon atom. The results indicate that the surface of as-anodized porous Si maintains a crystallinity of silicon.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109858
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