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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen desorption kinetics from the growing Si(100) surface during silane gas-source molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3358-3360 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen desorption from Si(100) surfaces during silane gas-source molecular beam epitaxy was investigated by temperature-dependent measurements on the growth rate (GR) and the surface hydrogen coverage (θ) during growth. By use of a prediction from a balance between adsorption and desorption of surface hydrogens that GR/θn should follow the Arrhenius relation, the reaction order n and the activation energy were obtained. It is most likely that the desorption proceeds via a first order reaction with the activation energy of 2.0 eV. This energy value is a reasonable one for the hydrogen desorption process and is compared to 1.29 eV for the growth rate itself.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110144
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