ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Growth patterns around etched mesas were observed during the atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) of InP layers with and without addition of trichloroethane (TCA) and InGaAs layers. It was observed that the addition of TCA during the MOVPE of InP induced rapid growth along high-index directions such as [113] as well as much more enhanced faceting along (001) and (111)p planes, resulting in a planar regrowth around reactive ion etched mesas parallel to [110] directions. No irregularity or interruption of growth was observed, providing an ideal sequence for the blocking layer regrowth used in laser fabrication. Regrowth of InGaAs layers also resulted in a planar regrowth around the mesas along [110] directions but through a somewhat different mechanism. Growth on (111) planes was completely suppressed in this case and the facets were less clearly defined, so that growth from the base plane proceeded without interacting with the sidewalls.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110351
