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Giant optical bistable behavior using triple-barrier resonant tunneling light-emitting diodes (1993)

Van Hoof, C. ; Genoe, J. ; Raymond, S. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 2390-2392

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: By achieving electrostatic feedback due to hole accumulation in an asymmetric triple-barrier resonant tunneling light-emitting diode, inverted bistability is obtained in the current-voltage characteristics. In the low current state, the resonant electron current is suppressed, resulting in the absence of quantum-well light emission. When switching to the high current state, the sudden increase in electron population causes a steplike increase in luminescence which yields an optical on–off ratio larger than 104:1. This improvement by a least a factor of 1000 with respect to the existing double-barrier resonant tunneling light-emitting diodes makes the new triple-barrier structure drastically more appealing for bistable switching applications.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.110484

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