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Low-temperature ion-induced epitaxial growth of α-FeSi2 and cubic FeSi2 in Si (1993)

Lin, X. W. ; Behar, M. ; Desimoni, J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 105-107

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concentration was studied. The structure of the specimen was characterized using transmission electron microscopy and Rutherford backscattering spectrometry. Both cubic FeSi2 and α-FeSi2 were formed in epitaxy with the Si matrix with two types of orientations (fully aligned and twinned). The twins of α-FeSi2 and those of cubic FeSi2 were found to have exactly the same type of epitaxial relationship as for the aligned ones. The thermodynamically stable β-FeSi2 is not formed, demonstrating that ion-beam-induced crystallization can lead to preferential phase formation as well as to epitaxy.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109727

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