ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We use high-resolution transmission electron microscopy to determine the microstructure of the emitter polycrystalline (poly) Si/Si interface of real bipolar transistor devices after rapid thermal annealing. Our results quantify the size and density of interfacial oxide voids (pinholes), the areal fraction of the interface covered with voids, and the amount of epitaxial regrowth after annealing in the range 1000–1150 °C. Correlation of these results with the characteristics of the devices shows that the most dramatic electrical changes occur before 2% of the poly-Si/Si interfacial area is covered with oxide voids.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107462