Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2121-2122
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter, we report the influence of silicon donors on the linewidth of intersubband transitions 1–2 in GaAs/Ga0.75Al0.25As square quantum wells. We clearly demonstrate that the relative position between the ionized impurities and the center of the quantum wells is a major factor on the linewidth of the mid-infrared (10 μm) transitions. Besides, it is shown that the scattering processes are more influenced by temperature when donors are far from the quantum well (QW).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107082
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