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Electroluminescence from bipolar resonant tunneling diodes (1992)

Van Hoof, C. ; Genoe, J. ; Mertens, R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 77-79

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The incorporation of an AlAs/GaAs resonant tunneling structure inside a GaAs p-n junction leads to strong quantum-well electroluminescence originating from electron and hole tunneling into the resonant tunneling structure. A large peak-to-valley ratio of 10:1 in the electroluminescence intensity is achieved at the electron resonance at 4.2 K, which decreases but persists (1.45:1) at room temperature. Resonant tunneling of holes is also apparent from the electroluminescence at low temperature.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.107380

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