Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 944-946
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Zinc blende and wurtzitic GaN films have been epitaxially grown onto (001)Si by electron 〈m1;&1p〉cyclotron resonance microwave plasma-assisted molecular beam epitaxy, using a two-step growth process. In this process a thin buffer layer is grown at relatively low temperatures followed by a higher temperature growth of the rest of the film. GaN films grown on a single crystalline GaN buffer have the zinc blende structure, while those grown on a polycrystalline or amorphous buffer have the wurtzitic structure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106309
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