Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1407-1408
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Buried heterostructure lasers fabricated using a three-step gas source molecular beam epitaxy (GSMBE) process are presented for the first time. We propose a new structure design compatible with nonselective regrowth for the blocking layers, therefore avoiding the use of a dielectric mask. The structure is terminated by a second overgrowth after a material lift-off. Preliminary results show cw operation with threshold currents of 60 mA for 800-μm-long devices and maximum output power up to 27 mW per facet.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.105321
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