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Si ultrashallow p+n junctions using low-energy boron implantation (1991)

Bousetta, A. ; van den Berg, J. A. ; Armour, D. G. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 1626-1628

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were obtained by implanting B+ ions into n-type Si(100) at 200 eV to doses of 1.5×1014 and 6×1014 cm−2 and at substrate temperatures in the range 30–900 °C during B implantation. Both post-implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p+n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105146

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