ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Ion-implanted extrinsic Ge photodetectors with extended cutoff wavelength (1991)

Wu, I. C. ; Beeman, J. W. ; Luke, P. N. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 1431-1433

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Far-infrared properties of a two-layer structure consisting of an ion-implantation doped layer on a thin ultrapure slice of germanium have been studied. Photoresponse extends beyond the shallow impurity absorption edge at 120 μm to about 192 μm. Photoconductivity studies have been performed between 4.2 and 1.3 K. Detectors with an area of 1×1 mm2 have dark currents of less than 100 electrons/s at temperatures ≤1.3 K at a bias of 70 mV. A responsivity of 0.9 A/W and a noise equivalent power of 5×10−16 W/Hz1/2 have been measured using photons in a narrow band 99±0.5 μm.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105189

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit