Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1044-1046
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have used grazing incidence x-ray scattering techniques to investigate the structure of the Si-SiO2 interface, obtained by native oxidation of a Si(001) surface. The x-ray diffraction patterns reveal a twofold symmetric interfacial phase, of 2×1 periodicity. This interfacial phase, which is coherent with the silicon substrate, extends over very large lateral distances (up to 5000 A(ring)) and is less than 5 A(ring) thick. This phase is very disordered at the atomic scale. Its extent and perfection strongly depend on the flatness of the initial silicon substrate.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104418
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