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Digitale Medien

Ion irradiation enhanced crystal nucleation in amorphous Si thin films (1990)

Im, J. S. ; Atwater, Harry A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 1766-1768

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe+ irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500–580 °C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.104061

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