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Digitale Medien

Chemical beam epitaxial growth of InAs using trimethylindium and arsine (1990)

Chiu, T. H. ; Ditzenberger, J. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 2219-2221

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report the growth study of InAs by chemical beam epitaxy. Growth conditions for high quality epilayer has been determined from in situ reflection high-energy electron diffraction measurement, surface morphology, photoluminescence, and Hall measurement. The growth rate measurement shows that the pyrolysis characteristics of trimethylindium are qualitatively similar to that of triethylgallium which have previously been simulated by a surface chemical kinetics model. The boundary condition between In- and As-stabilized surface in the previously unexplored temperature range of 520–560 °C gives an activation energy of 3.1 eV for the As desorption from the InAs surface.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.102972

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