Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 1766-1768
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A self-consistent quantitative analysis of recent kinetic data on the role of di- and trisilane in the plasma-induced deposition of amorphous silicon from monosilane confirms the conclusion that the dominant reactive intermediate responsible for the formation of di- and trisilane and, consequently, for the deposition of a high quality amorphous silicon is SiH2. The data show that the SiH3 radical may play only a negligible, if any, role in this process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103221
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