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Digitale Medien

Vertical cavity single quantum well laser (1989)

Jewell, J. L. ; Huang, K. F. ; Tai, K. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 424-426

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In0.2Ga0.8As. Limited gain due to the extremely short active material length of 80 A(ring) implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm2 at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm2.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.101885

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