Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 498-500
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Bi(-Pb)-Sr-Ca-Cu-O thin films were prepared on MgO(100) single-crystal substrates by electron cyclotron resonance (ECR) plasma sputtering at substrate temperatures from room temperature to 590 °C. Pb-doped superconducting as-grown films were obtained above 560 °C. The Tc values of the Pb-doped films prepared at 570–590 °C were 58–64 K which increased with increasing substrate temperature. Pb-undoped as-grown films obtained at 590 °C showed superconduction (Tc =30 K), but the films obtained below 580 °C were semiconductors. The grain sizes and contents of the 37 A(ring) phase (110 K phase) were increased by the Pb doping into the as-grown Bi-Sr-Ca-Cu-O films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101862
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