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Wave function sweeping in AlxGa1−xAs-GaAs quantum wells (1989)

Ensslin, K. ; Heitmann, D. ; Ploog, K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 368-370

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Specially tailored gated AlxGa1−xAs-GaAs quantum well (QW) structures have been prepared, where it is possible to sweep the maximum of the electron wave function and, thus, the electron density via the gate voltage very effectively from the substrate side of the QW to the front side. In our structure this sweeping is so pronounced that it leads to a unique influence on the actual band structure and cyclotron resonance mass.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101873

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