Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 2298-2300
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Metallic layers of ErP0.6As0.4 have been grown by molecular beam epitaxy on GaAs at 500 °C. The growth has been achieved by adjusting the PH3 and AsH3 flows to obtain a good lattice match to the substrate, the erbium flux remaining below the flux of the V elements. The 10–100 nm thick epitaxial layers reproducibly showed lattice mismatch below 5×10−4 and unlike the ErAs layers, they do not degrade in the atmosphere. Due to its low resistivity (ρ=80 μΩ cm), this compound is an ideal candidate for the realization of epitaxial III-V semiconductor/metal/III-V semiconductor heterostructures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102043
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