ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented on the efficiency, reliability, and temperature dependence of wavelength and threshold for strained-layer InxGa1−xAs-GaAs (x∼0.25, λ〉1.06 μm) separate confinement heterostructure lasers for several thicknesses near the critical thickness. Devices with well thicknesses of 100 A(ring) exhibit excellent time-zero characteristics and reliability, while those with 143 A(ring) wells have higher initial thresholds and degrade rapidly.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102089