Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1850-1852
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
ZnSe epitaxial layers were successfully grown on (100) Si substrates by low-pressure organometallic chemical vapor deposition. The initial growth rate is not critical. The optimum growth temperature of ZnSe/Si is higher than that of ZnSe/GaAs. From x-ray and scanning electron microscopy examinations, single crystalline ZnSe epilayers with mirror-like surfaces can be obtained by a simple growth process. Two-step growth process is a suitable way to improve the ZnSe/Si quality. It seems to be able to remove the Zn vacancy which is associated with the photoluminescence broad band. The efficient 77 K photoluminescence indicates that the ZnSe epilayers are of good quality.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102185
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